JPS6159660B2 - - Google Patents
Info
- Publication number
- JPS6159660B2 JPS6159660B2 JP1979979A JP1979979A JPS6159660B2 JP S6159660 B2 JPS6159660 B2 JP S6159660B2 JP 1979979 A JP1979979 A JP 1979979A JP 1979979 A JP1979979 A JP 1979979A JP S6159660 B2 JPS6159660 B2 JP S6159660B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- wiring board
- main surface
- lead
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 17
- 238000005219 brazing Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 29
- 238000007747 plating Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979979A JPS55113351A (en) | 1979-02-23 | 1979-02-23 | Integrated circuit module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979979A JPS55113351A (en) | 1979-02-23 | 1979-02-23 | Integrated circuit module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55113351A JPS55113351A (en) | 1980-09-01 |
| JPS6159660B2 true JPS6159660B2 (en]) | 1986-12-17 |
Family
ID=12009387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1979979A Granted JPS55113351A (en) | 1979-02-23 | 1979-02-23 | Integrated circuit module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55113351A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007158438A (ja) * | 2005-11-30 | 2007-06-21 | Daihen Corp | インピーダンス変換器 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57153457A (en) * | 1981-03-17 | 1982-09-22 | Nec Corp | Semiconductor mounting apparatus |
| DE3611658A1 (de) * | 1985-04-05 | 1986-10-16 | Omron Tateisi Electronics Co., Kyoto | Elektronikbauteilaufbau |
| JPS629640A (ja) * | 1985-07-08 | 1987-01-17 | Nec Corp | 半導体部品の実装構造 |
| US9554488B2 (en) * | 2014-04-18 | 2017-01-24 | Raytheon Company | Method to align surface mount packages for thermal enhancement |
| CN113539995B (zh) * | 2021-07-16 | 2024-04-12 | 威星国际半导体(深圳)有限公司 | 一种高导热率碳化硅器件封装结构及方法 |
-
1979
- 1979-02-23 JP JP1979979A patent/JPS55113351A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007158438A (ja) * | 2005-11-30 | 2007-06-21 | Daihen Corp | インピーダンス変換器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55113351A (en) | 1980-09-01 |
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